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The Effect of Oxygenation on the Radiation Hardness of Silicon Studied by Surface Photovoltage Method

Referentgranskad
Yli-Koski, Marko; Härkönen, Jaakko; Tuominen, Eija; Lassila-Perini, Kati; Mehtälä, P.; Nummela, Saar...
IEEE Transactions on Nuclear Science2002Publicationer information ikon

Results on radiation hardness of black silicon induced junction photodetectors from proton and electron radiation

Referentgranskad
DOI
10.1016/j.nima.2020.164294
Heinonen, J; Modanese, C.; Haarahiltunen, A.; Kettunen, H.; Rossi, M; Jaatinen, J; Juntunen, M
Nuclear Instruments and Methods in Physics Research Section A: Accelerators Spectrometers Detectors ...2020Publicationer information ikon

Fabrication of nickel-graphene composites with superior hardness

Referentgranskad
DOI
10.1016/j.jallcom.2020.155463
Kurapova, Olga Yu; Lomakin, Ivan V.; Sergeev, Semen N.; Solovyeva, Elena N.; Zhilyaev, Alexander P.;...
Journal of Alloys and Compounds2020Publicationer information ikon

On the correlation of hardness with tensile and yield strength

Auerkari, Pertti
Valtion teknillinen tutkimuskeskus. Tutkimuksia - Research Reports1986Publicationer information ikon

Radiation hardness of Czochralski silicon studied by 10-MeV and 20-MeV protons

Referentgranskad
Tuominen, E.; Härkönen, Jaakko; Tuovinen, Esa; Lassila-Perini, K.; Luukka, P.; Mehtälä, P.; Nummela,...
IEEE Transactions on Nuclear Science2003Publicationer information ikon

On Building Fine-Grained One-Way Functions from Strong Average-Case Hardness

Referentgranskad
Öppen tillgång
DOI
10.1007/s00145-024-09518-1
Brzuska, Chris; Couteau, Geoffroy
Journal of Cryptology2024Publicationer information ikon

Density profile relation to hardness of viscoelastic thermal compressed (VTC) wood composite

Referentgranskad
DOI
10.1007/s00226-010-0400-0
Rautkari, Lauri; Kamke, Frederick A.; Hughes, Mark
Wood Science and Technology2011Publicationer information ikon

Radiation hardness assurance through system-level testing : risk acceptance, facility requirements, test methodology and data exploitation

Referentgranskad
Öppen tillgång
DOI
10.1109/TNS.2021.3061197
Coronetti, Andrea; Garcìa Alìa, Rubén; Budroweit, Jan; Rajkowski, Tomasz; Da Costa Lopes, Israel; Ni...
IEEE Transactions on Nuclear Science2021Publicationer information ikon

Statistical Analysis of Heavy-Ion Induced Gate Rupture in Power MOSFETs—Methodology for Radiation Hardness Assurance

Referentgranskad
DOI
10.1109/TNS.2012.2223761
Ferlet-Cavrois, V.; Binois, C.; Carvalho, A.; Ikeda, N.; Inoue, M.; Eisener, B.; Gamerith, S.; Chaum...
IEEE Transactions on Nuclear Science2012Publicationer information ikon

Characterization of magnetic Czochralski silicon devices with aluminium oxide field insulator: Effect of oxygen precursor on electrical properties and radiation hardness

Referentgranskad
Öppen tillgång
DOI
10.1088/1748-0221/16/05/P05011
Ott, J.; Bharthuar, S.; Gädda, Akiko; Arsenovich, T.; Bezak, M.; Brücken, Erik; Golovleva, M.; Härkö...
Journal of instrumentation2021

The Effect of Oxygenation on the Radiation Hardness of Silicon Studied by Surface Photovoltage Method

Referentgranskad
2002

Results on radiation hardness of black silicon induced junction photodetectors from proton and electron radiation

Referentgranskad
DOI
10.1016/j.nima.2020.164294
2020

Fabrication of nickel-graphene composites with superior hardness

Referentgranskad
DOI
10.1016/j.jallcom.2020.155463
2020

On the correlation of hardness with tensile and yield strength

1986

Radiation hardness of Czochralski silicon studied by 10-MeV and 20-MeV protons

Referentgranskad
2003

On Building Fine-Grained One-Way Functions from Strong Average-Case Hardness

Referentgranskad
Öppen tillgång
DOI
10.1007/s00145-024-09518-1
2024

Density profile relation to hardness of viscoelastic thermal compressed (VTC) wood composite

Referentgranskad
DOI
10.1007/s00226-010-0400-0
2011

Radiation hardness assurance through system-level testing : risk acceptance, facility requirements, test methodology and data exploitation

Referentgranskad
Öppen tillgång
DOI
10.1109/TNS.2021.3061197
2021

Statistical Analysis of Heavy-Ion Induced Gate Rupture in Power MOSFETs—Methodology for Radiation Hardness Assurance

Referentgranskad
DOI
10.1109/TNS.2012.2223761
2012

Characterization of magnetic Czochralski silicon devices with aluminium oxide field insulator: Effect of oxygen precursor on electrical properties and radiation hardness

Referentgranskad
Öppen tillgång
DOI
10.1088/1748-0221/16/05/P05011
2021